Книжкові видання та компакт-диски Журнали та продовжувані видання Автореферати дисертацій Реферативна база даних Наукова періодика України Тематичний навігатор Авторитетний файл імен осіб
|
Для швидкої роботи та реалізації всіх функціональних можливостей пошукової системи використовуйте браузер "Mozilla Firefox" |
|
|
Повнотекстовий пошук
Пошуковий запит: (<.>A=Kuchuk A$<.>) |
Загальна кількість знайдених документів : 10
Представлено документи з 1 до 10
|
1. |
Mitin V. F. Study of Structure and Intrinsic Stresses of Ge Thin Films on GaAs [Електронний ресурс] / V. F. Mitin, V. V. Kholevchuk, V. P. Kladko, A. V. Kuchuk, P. M. Lytvyn, L. A. Matveeva // Proceedings of the International Conference Nanomaterials: Applications and Properties. - 2013. - Vol. 2, no. 1. - С. 01PCSI20-01PCSI20. - Режим доступу: http://nbuv.gov.ua/UJRN/princon_2013_2_1_63
| 2. |
Kuchuk A. Correlation between Crystallographic Alignment of Self-induced GaN Nanowires and Features of Si(111) Nitridation [Електронний ресурс] / A. Kuchuk, V. Kladko, P. Lytvyn, H. Stanchu, M. Sobancka, A. Wierzbicka, K. Klosek, Z. R. Zytkiewicz // Proceedings of the International Conference Nanomaterials: Applications and Properties. - 2013. - Vol. 2, no. 4. - С. 04NAESP21-04NAESP21. - Режим доступу: http://nbuv.gov.ua/UJRN/princon_2013_2_4_23
| 3. |
Kladko V. P. X-ray diffraction study of deformation state in InGaN/GaN multilayered structures [Електронний ресурс] / V. P. Kladko, A. V. Kuchuk, N. V. Safryuk, V. F. Machulin, A. E. Belyaev, R. V. Konakova, B. S. Yavich // Semiconductor physics, quantum electronics & optoelectronics. - 2010. - Vol. 13, № 1. - С. 1-7. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2010_13_1_3 High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa1-xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its separate layers, degree of relaxation in the structure layers, as well as the period of the SL, thicknesses of its layers and composition of InxGa1-x solid solution in active area were determined. It was found that SL was grown on the relaxed buffer layer. SL layers were grown practically coherent with slight relaxation of InGaN layer (about 1,5 %). The role of dislocations in relaxation processes was established. Analysis of experimental diffraction spectra in these multilayered structures within the frameworks of Parrat-Speriozu was adapted for hexagonal syngony structures.
| 4. |
Belyaev A. E. The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts [Електронний ресурс] / A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, R. V. Konakova, V. P. Kladko, Ya. Ya. Kudryk, A. V. Kuchuk, O. S. Lytvyn, V. V. Milenin, T. V. Korostinskaya, A. B. Ataubaeva, P. V. Nevolin // Semiconductor physics, quantum electronics & optoelectronics. - 2010. - Vol. 13, № 1. - С. 8-11. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2010_13_1_4 We consider the features of formation of Au - Ti - Pd ohmic contacts to <$E p sup +>-S. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 <$E symbol Р>C. It is shown that the contact resistivity increases wil temperature; this is typical of metallic conductivity. We suggest that the ohmic contact formed owing to appearance of shunts at Pd deposition on dislocations or other structural defects. The number of shunts per unit area is close to the measured density of structural defects at the metal - Si interface.
| 5. |
Sachenko A. V. Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density [Електронний ресурс] / A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, L. M. Kapitanchuk, V. P. Klad'ko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, A. V. Naumov, V. V. Panteleev, V. N. Sheremet // Semiconductor physics, quantum electronics & optoelectronics. - 2012. - Vol. 15, № 4. - С. 351-357. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2012_15_4_11 We studied temperature dependences of the resistivity, <$E rho sub c (T)>, of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n-GaN and n-AlN with a high dislocation density. Both <$E rho sub c (T)> curves have portions of exponential decrease, as well as those with very slight <$E rho sub c (T)> dependence at higher temperatures. Besides, the Au-Pd-Ti-Pd-n-GaN contacts have a portion of <$E rho sub c (T)> flattening out in the low-temperature region. This portion appears only after rapid thermal annealing (RTA). In principle, its appearance may be caused by preliminary heavy doping of the near-contact region with a shallow donor impurity as well as doping in the course of contact formation owing to RTA, if the contact-forming layer involves a material atoms of which serve as shallow donors in III - N compounds. The obtained <$E rho sub c (T)> dependences cannot be explained by the existing mechanisms of current transfer. We propose other mechanisms explaining the experimental <$E rho sub c (T)> curves for ohmic contacts to n-GaN and n-AlN.
| 6. |
Safriuk N. V. X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates [Електронний ресурс] / N. V. Safriuk, G. V. Stanchu, A. V. Kuchuk, V. P. Kladko, A. E. Belyaev, V. F. Machulin // Semiconductor physics, quantum electronics & optoelectronics. - 2013. - Vol. 16, № 3. - С. 265-272. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2013_16_3_8
| 7. |
Sachenko A. V. Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts [Електронний ресурс] / A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, V. P. Klad'ko, R. V. Konakova, A. V. Kuchuk, T. V. Korostinskaya, A. S. Pilipchuk, V. N. Sheremet, Yu. I. Mazur, M. E. Ware, G. J. Salamo // Semiconductor physics, quantum electronics & optoelectronics. - 2013. - Vol. 16, № 4. - С. 313-321. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2013_16_4_3 We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n<^>+-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact occurs in the course of RTA at <$E T~=~900~symbol Р roman C> due to formation of titanium nitride. We studied experimentally and explained theoretically the temperature dependence of contact resistivity <$E rho sub c (T)> of ohmic contacts in the 4,2 - 380 K temperature range. The <$E rho sub c (T)> curve was shown to flatten out in the 4,2 - 50 K range. As temperature grew, <$E rho sub c> decreased exponentially. The results obtained enabled us to conclude that current flow has field nature at saturation of <$E rho sub c (T)> and the thermofield nature in the exponential part of <$E rho sub c (T)> curve.
| 8. |
Kladko V. P. Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios [Електронний ресурс] / V. P. Kladko, N. V. Safriuk, H. V. Stanchu, A. V. Kuchuk, V. P. Melnyk, A. S. Oberemok, S. B. Kriviy, Z. V. Maksymenko, A. E. Belyaev, B. S. Yavich // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 4. - С. 317-324. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_4_3 Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa1-xN/GaN with A1 (~10 %) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and individual layers, relaxation level and periods, layers' thickness and composition of AlxGa1-xN layers were analyzed using high-resolution X-ray diffractometry. It was ascertained that the buffer layer and SL layers are compressed in all the investigated structures. Thus, it has been shown that deformation of the SL period depends on the well/barrier thickness ratio. Thicknesses of individual layers in SL strongly depend on the deformation state of the whole system. Increasing the deformation level leads to the increase of the barrier layer thickness.
| 9. |
Kuchuk A. Culture as a way of cognition of law (social and cultural paradigm law) [Електронний ресурс] / A. Kuchuk, T. Antonenko, O. Rembach // Вісник Національної академії керівних кадрів культури і мистецтв. - 2019. - № 3. - С. 130-134. - Режим доступу: http://nbuv.gov.ua/UJRN/vdakkkm_2019_3_28
| 10. |
Kuchuk A. Ukrainian language as state language: general and law discourse [Електронний ресурс] / A. Kuchuk, K. Vetoshko // Scientific Bulletin of Dnipropetrovsk State University of Internal Affairs. - 2022. - № 1. - С. 24-29. - Режим доступу: http://nbuv.gov.ua/UJRN/nvdv_s_2022_1_6
|
|
|